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FML9 Datasheet, PDF (2/4 Pages) Rohm – General purpose transistor (isolated transistor and diode) | |||
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Transistors
!Absolute maximum ratings (Ta=25°C)
Tr1
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
Pc
Tj
Tstg
Limits
â15
â12
â6
â1.5
â3
200
150
â40~+125
â1 Single pulse, Pw=1ms.
â2 Each terminal mounted on a recommended land.
Unit
V
V
V
A
A â1
mW â2
°C
°C
Di2
Parameter
Symbol Limits
Unit
Average rectified forward current
IF
700
mA
Forward current surge peak (60HZ, 1â) IFSM
3
A
Reverse voltage (DC)
VR
20
V
Junction temperature
Tj
125
°C
Range of storage temperature
Tstg â40~+125
°C
FML9
!Electrical characteristics (Ta=25°C)
Tr1
Parameter
Symbol
Collector-emitter breakdown voltage
BVCEO
Collector-base breakdown voltage
BVCBO
Emitter-base breakdown voltage
BVEBO
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
Collector-emitter saturation voltage
VCE(sat)
DC current gain
hFE
Transition frequency
fT
Collector output capacitance
Cob
Min. Typ. Max. Unit
Conditions
â12
â
â
V IC=â1mA
â15
â
â
V IC=â10µA
â6
â
â
V IE=â10µA
â
â
â100 nA VCB=â15V
â
â
â100 nA VEB=â6V
â
â110 â200 mV IC=â500mA, IB=â25mA
270
â
680
â VCE=â2V, IC=â200mA
â
400
â
MHz VCE=â2V, IE=200mA, f=100MHz
â
12
â
pF VCB=â10V, IE=0mA, f=1MHz
Di2
Parameter
Forward voltage
Reverse current
Symbol
VF
IR
Min. Typ. Max. Unit
Conditions
â
â
490 mV IF=700mA
â
â
200 µA VR=20V
2/4
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