FML10 Datasheet, PDF (2/5 Pages) Rohm – General purpose transistor (isolated transistor and diode)

Transistors
zAbsolute maximum ratings (Ta=25°C)
Tr1
Parameter
Symbol
Limits
Collector-base voltage
VCBO
15
Collector-emitter voltage
VCEO
12
Emitter-base voltage
VEBO
6
Collector current
IC
1.5
ICP
3
Power dissipation
PC
200
Junction temperature
Tj
150
Range of storage temperature Tstg
∗Single pulse, PW=1ms
−40 to +125
Unit
V
V
V
A
A∗
mW
°C
°C
Di2
Parameter
Symbol Limits
Unit
Reak reverse voltage
VRM
25
V
Average rectified forward current
IF
700
mA
Forward current surge peak (60HZ, 1∞) IFSM
3
A
Reverse voltage (DC)
VR
20
V
Junction temperature
Tj
125
°C
Range of storage temperature
Tstg −40 to +125 °C
FML10
zElectrical characteristics (Ta=25°C)
Tr1
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage BVCBO 15 − − V IC=10µA
Collector-emitter breakdown voltage BVCEO 12 − − V IC=1mA
Emitter-base breakdown voltage
BVEBO 6
−−
V IE=10µA
Collector cutoff current
ICBO
−
− 100 nA VCB=15V
Emitter cutoff current
IEBO
−
− 100 nA VEB=6V
Collector-emitter saturation voltage VCE(sat) − 85 200 mV IC/IB=500mA/25mA
DC current gain
hFE 270 − 680 − VCE/IC=2V/200mA
∗
Transition frequency
fT
− 400 − MHz VCE=2V, IE= −200mA, f=100MHz ∗
Collector output capacitance
∗Pulsed
Cob − 12 − pF VCB=10V, IE=0A, f=1MHz
Di2
Parameter
Forward voltage
Reverse current
Symbol Min. Typ. Max. Unit
Conditions
VF
−
−
490 mV IF=700mA
IR
−
−
200
µA VR=20V
Rev.B
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