EMZ8_1 Datasheet, PDF (2/5 Pages) Rohm – Power management (dual transistors)

Transistors
zElectrical characteristics (Ta=25°C)
Tr1
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
EMZ8 / UMZ8N
Min.
Typ. Max.
Unit
Conditions
−15
−
−
V IC = −10µA
−12
−
−
V IC = −1mA
−6
−
−
V IE = −10µA
−
−
−0.1
µA VCB = −15V
−
−
−0.1
µA VEB = −6V
−
−0.1 −0.25
V IC/IB = −200mA/−10mA
270
−
680
− VCE = −2V , IC = −10mA
−
260
−
MHz VCE = −2V , IE = 10mA , f = 100MHz
−
6.5
−
pF VCB = −10V , IE = 0A , f = 1MHz
Tr2
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
60
50
7
−
−
−
120
−
−
Typ.
−
−
−
−
−
−
−
180
2
Max.
−
−
−
0.1
0.1
0.4
560
−
3.5
Unit
V
V
V
µA
µA
V
−
MHz
pF
Conditions
IC = 50µA
IC = 1mA
IE = 50µA
VCB = 60V
VEB = 7V
IC/IB = 50mA/5mA
VCE = 6V , IC = 1mA
VCE = 12V , IE = −2mA , f = 100MHz
VCB = 12V , IE = 0A , f = 1MHz
zElectrical characteristic curves
<Tr1>
1000
500
VCE=2V
200 _Ta=125°C
100
Ta=25°C
Ta= −40°C
50
20
10
5
2
1
0
0.5
1.0
1.5
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded Emitter Propagation
Characteristics
1000
500
IC / IB=20
200
100
Ta=125°C
50
Ta=25°C
Ta= −40°C
20
10
5
2
1
1 2 5 10 20 50 100 200 500 1000
COLLECTOR CURRENT : IC (mA)
Fig.4 Collector-Emitter Saturation
Voltage vs.
Collector Current (Ι)
200
180
I _B =700µA
I_B =600µA
160
I_B =500µA
140
120
I_B =400µA
100
I_B =300µA
80
60
I_B =200µA
40
20
0
0
0.2 0.4 0.6 0.8
I_B=100µA _Ta=25°C
I_B=0µA pulsed
1 1.2 1.4 1.6 1.8 2
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Typical Output Characteristics
1000
500
VCE=2V
200
100
Ta=125°C
Ta=25°C
50
Ta= −40°C
20
10
5
2
1
1 2 5 10 20 50 100 200 500 1000
COLLECTOR CURRENT : IC (mA)
Fig.3 DC Current Gain vs.
Collector Current
1000
500
200
100
50
IC / IB=50
20 ^{IC / IB=20}
10 ^{IC / IB=10}
5
Ta=25°C
10000
5000
2000
1000
500
200
100
50
Ta= −40°C
Ta=25°C
Ta=125°C
IC / IB=20
2
1
1 2 5 10 20 50 100 200 500 1000
COLLECTOR CURRENT : IC (mA)
20
10
1 2 5 10 20 50 100 200 500 1000
COLLECTOR CURRENT : IC (mA)
Fig.5 Collector-Emitter Saturation
Voltage vs.
Collector Current (ΙΙ)
Fig.6 Base-Emitter Saturation
Voltage vs.Collecter Current
Rev.C
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