EMZ7T2R Datasheet, PDF (2/5 Pages) Rohm – General purpose transistor (dual transistors)

EMZ7 / UMZ7N
 Electrical characteristics (Ta=25C)
Tr1 (NPN)
Parameter
Symbol Min.
Collector-base breakdown voltage
BVCBO 15
Collector-emitter breakdown voltage BVCEO 12
Emitter-base breakdown voltage
BVEBO
6
Collector cutoff current
ICBO
−
Emitter cutoff current
IEBO
−
Collector-emitter saturation voltage
VCE(sat)
−
DC current transfer ratio
hFE
270
Transition frequency
fT
−
Output capacitance
Cob
−
Typ.
−
−
−
−
−
90
−
320
7.5
Max.
−
−
−
0.1
0.1
250
680
−
−
Unit
V
V
V
μA
μA
mV
−
MHz
pF
Conditions
IC= 10μA
IC= 1mA
IE= 10μA
VCB= 15V
VEB= 6V
IC/IB= 200mA /10mA
VCE/IC= 2V/10mA
VCE= 2V, IC= −10mA, f= 100MHz
VCB= 10V, IE= 0A, f= 1MHz
Tr2 (PNP)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
−15
−12
−6
−
−
−
270
−
−
Typ.
−
−
−
−
−
−100
−
260
6.5
Max.
−
−
−
−0.1
−0.1
−250
680
−
−
Unit
V
V
V
μA
μA
mV
−
MHz
pF
Conditions
IC= −10μA
IC= −1mA
IE= −10μA
VCB= −15V
VEB= −6V
IC/IB= −200mA/−10mA
VCE/IC= −2V/−10mA
VCE= −2V, IC= 10mA, f= 100MHz
VCB= −10V, IE= 0A, f= 1MHz
Packaging specifications
Packaging type
Part No.
Code
Basic ordering unit (pieces)
UMZ7N
EMZ7
Taping
TR
T2R
3000
−
8000
−
Data Sheet
www.rohm.com
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2012.06 - Rev.B