EMZ7 Datasheet, PDF (2/4 Pages) Rohm – General purpose transistor(dual transistors)

Transistors
EMZ7 / UMZ7N
! Electrical characteristics (Ta = 25°C)
Tr1 (NPN)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
15
12
6
−
−
−
270
−
−
Typ.
−
−
−
−
−
90
−
320
7.5
Max.
−
−
−
0.1
0.1
250
680
−
−
Unit
V
V
V
µA
µA
mV
−
MHz
pF
Conditions
IC=10µA
IC=1mA
IE=10µA
VCB=15V
VEB=6V
IC/IB=200mA/10mA
VCE/IC=2V/10mA
VCE=2V, IC=−10mA, f=100MHz
VCB=10V, IE=0A, f=1MHz
Tr2 (PNP)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
−15
−12
−6
−
−
−
270
−
−
Typ.
−
−
−
−
−
−100
−
260
6.5
Max.
−
−
−
−0.1
−0.1
−250
680
−
−
Unit
V
V
V
µA
µA
mV
−
MHz
pF
Conditions
IC=−10µA
IC=−1mA
IE=−10µA
VCB=−15V
VEB=−6V
IC/IB=−200mA/−10mA
VCE/IC=−2V/−10mA
VCE=−2V, IC=10mA, f=100MHz
VCB=−10V, IE=0A, f=1MHz
!Packaging specifications
Packaging type
Code
Part No. Basic ordering unit (pieces)
UMZ7N
EMZ7
Taping
TR
T2R
3000
8000
−
−
!Electrical characteristic curves
Tr1 (NPN)
1000
500
VCE=2V
200
100
50
20
10
5
2
1
0
0.5
1.0
1.5
BASE TO EMITTER VOLTAGE : VBE(V)
Fig.1 Grounded emitter propagation
characteristics
1000
500
200
100
50
Ta=125°C
25°C
−40°C
VCE=2V
20
10
5
2
1
1 2 5 10 20 50 100 200 5001000
COLLECTOR CURRENT : IC(mA)
Fig.2 DC current gain vs.
collector current
1000
500
IC/IB=20
200
100
50
Ta=125°C
25°C
20
−40°C
10
5
2
1
1 2 5 10 20 50 100 200 5001000
COLLECTOR CURRENT : IC(mA)
Fig.3 Collector-emitter saturation voltage
vs. collector current ( Ι )