EMZ51 Datasheet, PDF (2/10 Pages) Rohm – General Purpose Transister (dual transistors)

EMZ51
lAbsolute maximum ratings (T_a = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Datasheet
Symbol Tr1(NPN) Tr2(PNP) Unit
V_CBO
20
-20
V
V_CEO
20
-20
V
V_EBO
5
-5
V
I_C
200
-200 mA
I_CP*1
400
-400 mA
P_D*2 ^*3
150(Total)
mW
T_j
150
℃
T_stg
-55 to +150
℃
lElectrical characteristics (T_a = 25°C) <For Tr1(NPN)>
Parameter
Symbol
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Output capacitance
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
V_CE(sat)
h_FE
f_T
C_ob
I_C = 50μA
I_C = 1mA
I_E = 50μA
V_CB = 20V
V_EB = 5V
I_C = 100mA, I_B = 10mA
V_CE = 6V, I_C = 1mA
V_CE = 10V, I_E = -10mA,
f = 100MHz
V_CB = 10V, I_E = 0A,
f = 1MHz
Values
Min. Typ. Max.
Unit
20
-
-
V
20
-
-
V
5
-
-
V
-
- 0.1 μA
-
- 0.1 μA
- 0.12 0.30 V
120 - 560 -
- 400 - MHz
- 1.6 - pF
lElectrical characteristics (T_a = 25°C) <For Tr2(PNP)>
Parameter
Symbol
Conditions
Values
Min. Typ. Max.
Unit
Collector-base breakdown voltage BV_CBO I_C = -50μA
Collector-emitter breakdown
voltage
BV_CEO I_C = -1mA
-20 -
-
V
-20 -
-
V
Emitter-base breakdown voltage BV_EBO I_E = -50μA
-5
-
-
V
Collector cut-off current
I_CBO V_CB = -20V
-
- -0.1 μA
Emitter cut-off current
I_EBO V_EB = -5V
-
- -0.1 μA
Collector-emitter saturation voltage
V_CE(sat) I_C = -100mA, I_B = -10mA - -0.12 -0.30 V
DC current gain
h_FE V_CE = -6V, I_C = -1mA
120 - 560 -
Transition frequency
f_T
V_CE = -10V, I_E = 10mA,
f = 100MHz
-
350
-
MHz
Output capacitance
C_ob
V_CB = -10V, I_E = 0A,
f = 1MHz
-
2
- pF
*1 Pw=1ms Single Pulse
*2 Each terminal mounted on a reference footprint
*3 120mW per element must not be exceeded.
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20130905 - Rev.002