EMX5_1 Datasheet, PDF (2/3 Pages) Rohm – High transition frequency (dual transistors)

Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
∗Transition frequency of the device.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
EMX5 / UMX5N / IMX5
Min.
Typ.
Max.
Unit
Conditions
20
−
−
V
IC=10µA
11
−
−
V
IC=1mA
3
−
−
V
IE=10µA
−
−
0.5
µA VCB=10V
−
−
0.5
µA VEB=2V
56
−
120
−
VCE/IC=10V/5mA
−
−
0.5
V
IC/IB=10mA/5mA
1.4
3.2
−
GHz VCE/IE=10V/−10mA, f=500MHz ∗
−
0.9
1.55
pF VCB/f=10V/1MHz, IE=0A
zElectrical characteristics curves
500
Ta=25°C
VCE=10V
200
100
50
500
200
100
50 Ic/IB=10
Ta=25°C
5.0
Ta=25°C
VCE=10V
2.0
1.0
0.5
20
10
0.1 0.2 0.5 1 2
5 10 20 50
COLLECTOR CURRENT : IC (mA)
Fig.1 DC current gain vs. collector current
20
Ic/IB=2
10
0.1 0.2
0.5 1 2
5 10 20 50
COLLECTOR CURRENT : IC (mA)
Fig.2 Collector-emitter saturation voltage
vs. collector current
0.2
0.1
−0.1 −0.2 −0.5 −1 −2
−5 −10 −20 −50
EMITTER CURRENT : IE (mA)
Fig.3 Gain bandwidth product vs. emitter current
5.0
Ta=25°C
f=1MHz
IE=0A
2.0
1.0
Cob
0.5
Cre
0.2
0.1
0.1 0.2
0.5 1 2
5 10 20 50
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.4 Capacitance vs. reverse bias voltage
50
Ta=25°C
VCE=10V
f=31.8MHz
20
20
10
5.0
10
Ta=25°C
VCE=6V
f=500MHz
2.0
1.0
0.1 0.2
0.5 1 2
5 10 20 50
COLLECTOR CURRENT : IC (mA)
Fig.5 Collector to base time constant
vs. collector current characteristics
0
0.1 0.2 0.5 1 2
5 10 20 50
COLLECTOR CURRENT : IC (mA)
Fig.6 Noise factor vs. collector current characteristics
Rev.B
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