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EMX2_1 Datasheet, PDF (2/4 Pages) Rohm – General purpose (dual transistors) | |||
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Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
âTransition frequency of the device.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
EMX2 / UMX2N / IMX2
Min.
60
50
7
â
â
â
120
â
â
Typ.
â
â
â
â
â
â
â
180
2
Max.
â
â
â
0.1
0.1
0.4
560
â
3.5
Unit
V
V
V
µA
µA
V
â
MHz
pF
Conditions
IC=50µA
IC=1mA
IE=50µA
VCB=60V
VEB=7V
IC/IB=50mA/5mA
VCE=6V, IC=1mA
VCE=12V, IE= â2mA, f=100MHz â
VCB=12V, IE=0mA, f=1MHz
zElectrical characteristics curves
50
VCE=6V
20
10
5
2
1
0.5
0.2
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
characteristics
100 Ta=25°C
80
60
40
20
0.50mA
00..4450mmAA
0.35mA
0.30mA
0.25mA
0.20mA
0.15mA
0.10mA
0.05mA
0
IB=0A
0
0.4
0.8
1.2 1.6
2.0
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics ( Î )
10
Ta=25°C
8
30µA
27µA
24µA
21µA
6
18µA
15µA
4
12µA
9µA
6µA
2
3µA
0
IB=0A
0
4
8
12
16
20
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.3 Grounded emitter output
characteristics ( ÎÎ )
500
Ta=25°C
200
100
50
VCE=5V
3V
1V
20
10
0.2 0.5 1 2 5 10 20 50 100 200
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs.
collector current ( Î )
500
0.5
Ta=100°C
VCE=5V
Ta=25°C
200
25°C
â55°C
100
0.2
IC/IB=50
0.1
20
10
50
0.05
20
10
0.2 0.5 1 2 5 10 20 50 100 200
COLLECTOR CURRENT : IC (mA)
Fig.5 DC current gain vs.
collector current ( ÎÎ )
0.02
0.01
0.2 0.5 1 2
5 10 20 50 100 200
COLLECTOR CURRENT : IC (mA)
Fig. 6 Collector-emitter saturation
voltage vs. collector current
Rev.A
2/3
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