EMX2T2R Datasheet, PDF (2/4 Pages) Rohm – General purpose (dual transistors)

Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗Transition frequency of the device.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
EMX2 / UMX2N / IMX2
Min.
Typ.
Max.
Unit
Conditions
60
−
−
V
IC=50µA
50
−
−
V
IC=1mA
7
−
−
V
IE=50µA
−
−
0.1
µA VCB=60V
−
−
0.1
µA
VEB=7V
−
−
0.4
V
IC/IB=50mA/5mA
120
−
560
−
VCE=6V, IC=1mA
−
180
−
MHz VCE=12V, IE= −2mA, f=100MHz ∗
−
2
3.5
pF VCB=12V, IE=0mA, f=1MHz
zElectrical characteristics curves
50
VCE=6V
20
10
5
2
1
0.5
0.2
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
characteristics
100 _Ta=25°C
80
60
40
20
0.50mA
00..4450mmAA
0.35mA
0.30mA
0.25mA
0.20mA
0.15mA
0.10mA
0.05mA
0
IB=0A
0
0.4
0.8
1.2 1.6
2.0
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics ( Ι )
10
Ta=25°C
8
30µA
27µA
24µA
21µA
6
18µA
15µA
4
12µA
9µA
6µA
2
3µA
0
IB=0A
0
4
8
12
16
20
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.3 Grounded emitter output
characteristics ( ΙΙ )
500
Ta=25°C
200
100
50
VCE=5V
3V
1V
20
10
0.2 0.5 1 2 5 10 20 50 100 200
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs.
collector current ( Ι )
500
0.5
Ta=100°C
VCE=5V
Ta=25°C
200
25°C
−55°C
100
0.2
IC/IB=50
0.1
20
10
50
0.05
20
10
0.2 0.5 1 2 5 10 20 50 100 200
COLLECTOR CURRENT : IC (mA)
Fig.5 DC current gain vs.
collector current ( ΙΙ )
0.02
0.01
0.2 0.5 1 2
5 10 20 50 100 200
COLLECTOR CURRENT : IC (mA)
Fig. 6 Collector-emitter saturation
voltage vs. collector current
Rev.A
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