EMX18_1 Datasheet, PDF (2/4 Pages) Rohm – General purpose transistors (dual transistors)

Transistors
EMX18 / UMX18N
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage BVCBO 15 − − V IC=10µA
Collector-emitter breakdown voltage BVCEO 12 − − V IC=1mA
Emitter-base breakdown voltage
BVEBO 6 − − V IE=10µA
Collector cutoff current
ICBO
−
− 0.1 µA VCB=15V
Emitter cutoff current
IEBO
−
− 0.1 µA VEB=6V
Collector-emitter saturation voltage VCE (sat) − 90 250 mV IC/IB=200mA/10mA
DC current transfer ratio
hFE 270 − 680 − VCE=2V, IC=10mA
Transition frequency
fT
− 320 − MHz VCE=2V, IE=−10mA, f=100MHz
Output capacitance
Cob − 7.5 − PF VCB=10V, IE=0A, f=1MHz
zPackaging specifications
Package
Code
Type
Basic ordering
unit (pieces)
EMX18
UMX18N
Taping
T2R
TN
8000
3000
zElectrical characteristic curves
1000
VCE = 2V
500
200
100
50
20
10
5
2
1
0
0.5
1.0
1.5
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
characteristics
1000
Ta = 125°C
VCE = 2V
500
25°C
-40°C
200
100
50
20
10
5
2
1
1 2 5 10 20 50 100 200 500 1000
COLLECTOR CURRENT : IC (mA)
Fig.2 DC current gain vs.
collector current
1000
500
200
100
50
Ta = 125°C
25°C
20
-40°C
10
5
IC/IB = 20
2
1
1 2 5 10 20 50 100 200 500 1000
COLLECTOR CURRENT : IC (mA)
Fig.3 Collector-emitter saturation voltage
vs. collector current ( Ι )
Rev.A
2/3