EMT51T2R Datasheet, PDF (2/8 Pages) Rohm – General purpose transister (isolated dual transistors)

VT6T1 / EMT51
lAbsolute maximum ratings (T_a = 25°C)
<For Tr1 and Tr2 in common>
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
VT6T1
EMT51
Datasheet
Symbol
Values
Unit
V_CBO
-20
V
V_CEO
-20
V
V_EBO
-5
V
I_C
-200
mA
I_CP*1
-400
mA
150
P_D*2 ^*3
mW
150
T_j
150
℃
T_stg
-55 to +150
℃
lElectrical characteristics (T_a = 25°C)
<For Tr1 and Tr2 in common>
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Collector-base breakdown
voltage
BV_CBO I_C = -50μA
-20 -
-
V
Collector-emitter breakdown
voltage
BV_CEO I_C = -1mA
-20 -
-
V
Emitter-base breakdown voltage ^BV_EBO I_E = -50μA
-5
-
-
V
Collector cut-off current
I_CBO V_CB = -20V
-
- -0.1 μA
Emitter cut-off current
I_EBO V_EB = -5V
-
- -0.1 μA
Collector-emitter saturation voltage V_CE(sat) I_C = -100mA, I_B = -10mA _{- -0.12 -0.30 V}
DC current gain
h_FE V_CE = -6V, I_C = -1mA
120 -
560 -
Transition frequency
f_T
V_CE = -10V, I_E = 10mA,
f = 100MHz
-
350
-
MHz
Output capacitance
C_ob
V_CB = 10V, I_E = 0A,
f = 1MHz
- 1.6 - pF
*1 Pw=1ms Single Pulse
*2 Each terminal mounted on a reference footprint
*3 120mW per element must not be exceeded.
　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　
　
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