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EMT18_1 Datasheet, PDF (2/4 Pages) Rohm – General purpose transistors (dual transistors) | |||
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Transistors
EMT18 / UMT18N / IMT18
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage BVCBO â15 â â V IC= â10µA
Collector-emitter breakdown voltage BVCEO â12 â â V IC= â1mA
Emitter-base breakdown voltage
BVEBO â6 â
â
V IE= â10µA
Collector cutoff current
ICBO
â
â â0.1 µA VCB= â15V
Emitter cutoff current
IEBO
â
â â0.1 µA VCB= â6V
Collector-emitter saturation voltage VCE (sat) â â100 â250 mV IC / IB= â200mA / â10mA
DC current transfer ratio
hFE 270 â 680 â VCE= â2V, IC= â10mA
Transition frequency
fT
â 260 â MHz VCE= â2V, IE=10mA, f=100MHz
Output capacitance
Cob â 6.5 â pF VCB= â10V, IE=0A, f=1MHz
zPackaging specifications and hFE
Type
EMT18
UMT18N
IMT18
Package name
Code
Basic ordering unit (pieces)
T2R
8000
â
â
Taping
TR
3000
â
â
T110
3000
â
â
zElectrical characteristic curves
1000
500
VCE=2V
200 Ta=125°C
100
Ta=25°C
Ta= â40°C
50
20
10
5
2
1
0
0.5
1.0
1.5
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded Emitter Propagation
Characteristics
1000
500
VCE=2V
200
100
Ta=125°C
Ta=25°C
50
Ta= â40°C
20
10
5
2
1
1 2 5 10 20 50 100 200 500 1000
COLLECTOR CURRENT : IC (mA)
Fig.2 DC Current Gain vs.
Collector Current
1000
500
IC / IB=20
200
100
Ta=125°C
50
Ta=25°C
Ta= â40°C
20
10
5
2
1
1 2 5 10 20 50 100 200 500 1000
COLLECTOR CURRENT : IC (mA)
Fig.3 Collector-Emitter Saturation
Voltage vs.
Collector Current (Î)
Rev.B
2/3
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