EML20 Datasheet, PDF (2/4 Pages) Rohm – General purpose transistor (isolated transistor and diode)

Transistors
zAbsolute maximum ratings (Ta=25°C)
Di1
Parameter
Symbol Limits
Unit
Average revtified forward current
IO
200
mA
Forward current surge peak (60Hz, 1∞) IFSM
1
A
Reverse voltage (DC)
VR
30
V
Junction temperature
Tj
125
°C
DTr2
Parameter
Supply voltage
Symbol
VCC
Input voltage
VIN
Output current
IO
IC (MAX.)
Power dissipation
Pd
Junction temperature
Tj
∗ Each terminal mounted on a recommended.
Limits
50
12
−5
100
100
120
150
Unit
V
V
mA
mA
mW ^∗
°C
Di1 / DTr2
Parameter
Symbol
Power dissipation
Pd
Storage temperature
Tstg
∗ Each terminal mounted on a recommended.
Limits
150
−55 to +125
Unit
mW ∗
°C
EML20
zElectrical characteristics (Ta=25°C)
Di1
Parameter
Symbol
Forward voltage
VF
Reverse current
IR
DTr2
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
∗
Input resistance
Resistance ratio
∗ Characteristics of built-in transistor.
Symbol
Vl(off)
VI(on)
Vo(on)
II
IO(off)
GI
fT
R1
R2/R1
Min. Typ. Max. Unit
Conditions
−
0.40 0.50
V IF=200mA
−
4.0
30
µA VR=10V
Min.
−
1.1
−
−
−
80
−
1.54
17
Typ.
−
−
100
−
−
−
250
2.2
21
Max.
0.5
−
300
3.6
500
−
−
2.86
26
Unit
V
V
mV
mA
nA
−
MHz
kΩ
−
Conditions
VCC=5V / Io=100uA
VO=0.3V / Io=5mA
IO=5mA, II=0.25mA
VI=5V
VCC=50V / VI=0V
VO=5V / Io=10mA
VCE=10V / IE= −5mA, f=100MHz
−
−
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