EML17 Datasheet, PDF (2/4 Pages) Rohm – General purpose transistor

Transistors
zAbsolute maximum ratings (Ta=25°C)
Di1
Parameter
Symbol Limits
Unit
DC current voltage
VR
30
V
Mean rectifying current
IO
100
mA
Forward peak surge current (60HZ 1cyc.) IFSM
500
mA
Junction temperature
Tj
125
°C
Storage temperature
∗ 60Hz, 1
Tstg −40 to +125 °C
Tr2
Parameter
Symbol Limits
Unit
Supply voltage
Input voltage
Output current
VCC
−50
V
VIN −40 to +10
V
IO
−30
mA
IC(MAX)
−100
Power dissipation
Pd
120
mW
Junction temperature Tj
150
°C
Di1, Tr2
Parameter
Symbol
Power dissipation
Pd
Range of storage temperature Tstg
∗ Each terminal mounted on a recommended land.
Limits
150
−55 to +125
Unit
mW ∗
°C
EML17
zElectrical characteristics (Ta=25°C)
Di1
Parameter
Symbol
Forward voltage
VF
Reverse current
IR
∗ Please pay attention to static electricity when handling.
Tr2
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
∗ Transition frequency of the device
Symbol
VI(off)
VI(on)
VO(on)
II
IO(off)
G1
R1
R2/R1
fT
Min. Typ. Max. Unit
Conditions
−
−
0.45
V IF=10mA
−
−
0.5
µA VR=10V
Min.
−
−3.0
−
−
−
68
32.9
0.8
−
Typ.
−
−
−0.1
−
−
−
47
1
250
Max.
−0.5
−
−0.3
−0.18
−0.5
−
61.1
1.2
−
Unit
V
V
mA
µA
−
kΩ
−
MHz
Conditions
IC= −5V, IO= −100µA
VO= −0.3V, IO= −2mA
IO/II= −10mA/ −0.5mA
VI= −5V
VCC= −50V, VI=0V
VO= −5V, IO= −5mA
−
−
VCE= −10V, IE=5mA, f=100MHz ∗
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