EMD4T2R Datasheet, PDF (2/8 Pages) Rohm – NPN PNP Complex Digital Transistors (Bias Resistor Built-in Transistors)

EMD4 / UMD4N
lAbsolute maximum ratings (Ta = 25C)
Parameter
Supply voltage
Input voltage
Output current
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Data Sheet
Symbol
V_CC
V_IN
I_O
I_C(MAX.)*1
P_D ^*2
T_j
T_stg
DTr1(NPN) DTr2(PNP) Unit
50
-50
V
-10 to +40 -40 to +6
V
30
-70
mA
100
-100
mA
150 (Total)^*3
mW
150
°C
-55 to +150
°C
lElectrical characteristics(Ta = 25°C) <For DTr1(NPN)>
Parameter
Symbol
Conditions
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
V_I(off)
V_I(on)
V_O(on)
I_I
I_O(off)
G_I
R₁
R₂/R₁
V_CC = 5V, I_O = 100mA
V_O = 0.3V, I_O = 2mA
I_O / I_I = 10mA / 0.5mA
V_I = 5V
V_CC = 50V, V_I = 0V
V_O = 5V, I_O = 5mA
-
-
Transition frequency
f_T ^*1
V_CE = 10V, I_E = -5mA
f = 100MHz
Min.
-
3.0
-
-
-
68
32.9
0.8
-
Typ.
-
-
0.1
-
-
-
47
1
250
Max.
0.5
-
0.3
0.18
0.5
-
61.1
1.2
-
Unit
V
V
mA
mA
-
kW
-
MHz
lElectrical characteristics(Ta = 25°C) <For DTr2(PNP)>
Parameter
Symbol
Conditions
Input voltage
Output voltage
V_I(off)
V_I(on)
V_O(on)
V_CC = -5V, I_O = -100mA
V_O = -0.3V, I_O = -1mA
I_O / I_I = -5mA / -0.25mA
Input current
Output current
DC current gain
Input resistance
I_I
I_O(off)
G_I
R₁
V_I = -5V
V_CC = -50V, V_I = 0V
V_O = -5V, I_O = -5mA
-
Resistance ratio
R₂/R₁
-
Transition frequency
f_T ^*1
V_CE = -10V, I_E = 5mA
f = 100MHz
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
*3 120mW per element must not be exceeded.
Min.
-
-1.4
-
-
-
68
7
3.7
-
Typ. Max. Unit
-
-0.3
V
-
-
-0.1 -0.3
V
- -0.88 mA
-
-0.5 mA
-
-
-
10
13
kW
4.7 5.7
-
250
-
MHz
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2013.07 - Rev.C