DTD114EC Datasheet, PDF (2/8 Pages) Rohm – 500mA/50V Digital transistor

DTD114EC
　
lAbsolute maximum ratings (T_a = 25°C)
Parameter
Supply voltage
Input voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
　 　 　 　 　 　 　 　 _Datasheet
Symbol
Values
Unit
V_CC
50
V
V_IN
-10 to 40
V
I_C(MAX)*1
500
mA
P_D*2
200
mW
T_j
150
℃
T_stg
-55 to +150
℃
lElectrical characteristics (T_a = 25°C)
Parameter
Symbol
Conditions
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
V_I(off)
V_I(on)
V_O(on)
I_I
I_O(off)
G_I*3
R₁
R₂/R₁
V_CC = 5V, I_O = 100μA
V_O = 0.3V, I_O = 10mA
I_O = 50mA, I_I = 2.5mA
V_I = 5V
V_CC = 50V, V_I = 0V
V_O = 5V, I_O = 50mA
-
-
Values
Unit
Min. Typ. Max.
-
- 0.5
V
3.0 -
-
- 100 300 mV
-
- 880 μA
-
- 500 nA
56 -
-
-
7 10 13 kΩ
0.8 1.0 1.2 -
Transition frequency
f
*1
T
V_CE = 10V, I_E = -50mA,
f = 100MHz
-
200
-
MHz
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference land
*3 Pulsed
　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　
　
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20160208 - Rev.001