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DTC114ECAHZG Datasheet, PDF (2/8 Pages) Rohm – NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) | |||
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DTC114ECA HZG
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lAbsolute maximum ratings (Ta = 25°C)
Parameter
Supply voltage
Input voltage
Output current
Collector current
Power dissipation
Junction temperature
Range of storage temperature
ã ã ã ã ã ã ã ã Datasheet
Symbol
Values
Unit
VCC
50
V
VIN
-10 to 40
V
IO
50
mA
IC(MAX)*1
100
mA
PD*2
200
mW
PD*3
350
mW
Tj
150
â
Tstg
-55 to +150
â
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
VCC = 5V, IO = 100μA
VO = 0.3V, IO = 10mA
IO = 10mA, II = 0.5mA
VI = 5V
VCC = 50V, VI = 0V
VO = 5V, IO = 5mA
-
-
f
*1
T
VCE = 10V, IE = -5mA,
f = 100MHz
*1 Characteristics of built-in transistor.
*2 Each terminal mounted on a reference land.
*3 Mounted on a ceramic board(7.0Ã5.0Ã0.6mm).
Values
Unit
Min. Typ. Max.
-
- 0.5
V
3.0 -
-
- 100 300 mV
-
- 880 μA
-
- 500 nA
30 -
-
-
7 10 13 kΩ
0.8 1.0 1.2 -
- 250 - MHz
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20160613 - Rev.001
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