DTA125TUA_09 Datasheet, PDF (2/3 Pages) Rohm – -100mA / -50V Digital transistor (with built-in resistors)

DTA125TUA / DTA125TKA
 Absolute maximum ratings (Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Limits
Unit
VCBO
−50
V
VCEO
−50
V
VEBO
−5
V
IC
−100
mA
Pc
200
mW
Tj
150
°C
Tstg
−55 to +150
°C
Data Sheet
 Electrical characteristics (Ta=25C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
∗ Characteristics of built-in transistor
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R1
fT ∗
Min.
−50
−50
−5
−
−
−
100
140
−
Typ. Max.
−
−
−
−
−
−
−
−0.5
−
−0.5
−
−0.3
250
600
200
260
250
−
Unit
V
V
V
μA
μA
V
−
kΩ
MHz
Conditions
IC= −50μA
IC= −1mA
IE= −50μA
VCB= −50V
VEB= −4V
IC= −0.5mA , IB= −0.05mA
IC= −1mA , VCE= −5V
−
VCE= −10V , IE=5mA , f=100MHz
 Electrical characteristic curves
1k
VCE=5V
500
Ta=100°C
Ta=25°C
200
100
Ta= −40°C
50
20
10
5
2
1
10μ 20μ 50μ 100μ 200μ 500μ 1m 2m 5m 10m
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain
vs. Collector current
1
IC/IB=10/1
500m
200m
Ta=100°C
100m
Ta=25°C
50m
Ta= −40°C
20m
10m
5m
2m
1m
10μ 20μ 50μ 100μ 200μ 500μ 1m 2m 5m 10m
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-Emitter saturation voltage
vs. Collector current
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2009.06 - Rev.C