DTA114YE Datasheet, PDF (2/4 Pages) Motorola, Inc – Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

Transistors
DTA114YM / DTA114YE / DTA114YUA
DTA114YKA / DTA114YSA
!Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
VCC
VI
IO
IC(Max.)
Pd
Tj
Tstg
M
150
Limits(DTA114Y )
E
UA
KA
−50
−40~+6
−70
−100
200
150
−55~+150
Unit
SA
V
V
mA
300
mW
°C
°C
!Electrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Input voltage
VI(off)
−
− −0.3
VCC=−5V, IO=−100µA
V
VI(on)
−1.4
−
−
VO=−0.3V, IO=−1mA
Output voltage
VO(on)
−
−0.1 −0.3 V IO/II=−5mA/−0.25mA
Input current
II
−
− −0.88 mA VI=−5V
Output current
IO(off)
−
−
−0.5 µA VCC=−50V, VI=0V
DC current gain
GI
68
−
−
− VO=−5V, IO=−5mA
Input resistance
R1
7
10
13
kΩ
−
Resistance ratio
R2/R1 3.7 4.7 5.7
−
−
Transition frequency
fT
−
250
− MHz VCE=−10V, IE=5mA, f=100MHz ∗
∗ Transition frequency of the device
!Packaging specifications
Package
Packaging type
Code
VMT3
Taping
T2L
Type
Basic ordering
unit (pieces)
DTA114YM
DTA114YE
DTA114YUA
DTA114YKA
DTA114YSA
8000
−
−
−
−
EMT3
Taping
TL
3000
−
−
−
−
UMT3
Taping
T106
3000
−
−
−
−
SMT3
Taping
T146
3000
−
−
−
−
SPT
Taping
TP
5000
−
−
−
−