DTA114TUAT106 Datasheet, PDF (2/10 Pages) Rohm – PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)

DTA114T series
lAbsolute maximum ratings (Ta = 25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector Power dissipation
DTA114TM
DTA114TEB
DTA114TE
DTA114TUB
DTA114TUA
DTA114TKA
Junction temperature
Range of storage temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C ^*2
T_j
T_stg
Data Sheet
Values
Unit
-50
V
-50
V
-5
V
-100
mA
150
mW
200
mW
150
C
-55 to +150
C
lElectrical characteristics(Ta = 25C)
Parameter
Symbol
Collector-base breakdown voltage BV_CBO
Collector-emitter breakdown voltage BV_CEO
Emitter-base breakdown voltage
BV_EBO
Collector cut-off current
I_CBO
Emitter cut-off current
I_EBO
Collector-emitter saturation voltage V_CE(sat)
DC current gain
h_FE
Input resistance
R₁
Conditions
I_C= -50μA
I_C= -1mA
I_E= -50μA
V_CB = -50V
V_EB = -4V
I_C / I_B= -10mA / -1mA
V_CE= -5V , I_C= -1mA ,
-
Min.
-50
-50
-5
-
-
-
100
7
Transition frequency
f_T ^*1
V_CE = -10V, I_E = 5mA,
f = 100MHz
-
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
Typ.
-
-
-
-
-
-
250
10
250
Max.
-
-
-
-0.5
-0.5
-0.3
600
13
-
Unit
V
V
V
mA
mA
V
-
kW
MHz
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2012.04 - Rev.A