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DTA114TE_09 Datasheet, PDF (2/3 Pages) Rohm – -100mA / -50V Digital transistors (with built-in resistors) | |||
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DTA114TM / DTA114TE / DTA114TUA / DTA114TKA
ï¬ Packaging specifications
Package
Package type
Code
VMT3
Taping
T2L
Part No.
Basic ordering
unit (pieces)
8000
DTA114TM
DTA114TE
â
DTA114TUA
â
DTA114TKA
â
EMT3
Taping
TL
3000
â
â
â
UMT3
Taping
T106
3000
â
â
â
SMT3
Taping
T146
3000
â
â
â
ï¬ Absolute maximum ratings (Ta=25ï°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Limits
Symbol
Unit
DTA114TM DTA114TE DTA114TUA DTA114TKA
VCBO
â50
V
VCEO
â50
V
VEBO
â5
V
IC
â100
mA
PC
150
200
mW
Tj
150
°C
Tstg
â55 to +150
°C
ï¬ Electrical characteristics (Ta=25ï°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
â Characteristics of built-in transistor
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R1
fT â
Min. Typ. Max. Unit
Conditions
â50 â
â
V IC=â50μA
â50
â
â
V IC=â1mA
â5
â
â
V IE=â50μA
â
â â0.5 μA VCB=â50V
â
â â0.5 μA VEB=â4V
â
â â0.3 V IC/IB=â10mA/â1mA
100 250 600
â VCE=â5V, IC=â1mA
7
10 13 kΩ
â
â
250
â
MHz VCE=â10V, IE=5mA, f=100MHz
ï¬ Electrical characteristic curves
1k
VCE=â5V
500
200
100
Ta=100°C
25°C
50
â40°C
20
10
5
2
1
â100μ â200μ â500μ â1m â2m â5m â10m â20m â50mâ100m
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain vs. collector
current
â1
lC/lB=20
â500m
â200m
Ta=100°C
25°C
â100m
â40°C
â50m
â20m
â10m
â5m
â2m
â1m
â100μ â200μ â500μ â1m â2m â5m â10m â20m â50mâ100m
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-emitter saturation
voltage vs. collector current
Data Sheet
www.rohm.com
2/2
âc 2009 ROHM Co., Ltd. All rights reserved.
2009.06 - Rev.B
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