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DTA114TEFRA Datasheet, PDF (2/7 Pages) Rohm – PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor) | |||
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DTA114TE FRA
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lAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
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Symbol
Values
Unit
VCBO
-50
V
VCEO
-50
V
VEBO
-5
V
IC
-100
mA
PD*1
150
mW
Tj
150
â
Tstg
-55 to +150
â
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Collector-base breakdown
voltage
BVCBO IC = -50μA
Collector-emitter breakdown
voltage
BVCEO IC = -1mA
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Input resistance
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R1
IE = -50μA
VCB = -50V
VEB = -4V
IC = -10mA, IB = -1mA
VCE = -5V, IC = -1mA
-
Transition frequency
f
*2
T
VCE = -10V, IE = 5mA,
f = 100MHz
*1 Each terminal mounted on a reference land.
*2 Characteristics of built-in transistor
Values
Unit
Min. Typ. Max.
-50 -
-
V
-50 -
-
V
-5
-
-
V
-
- -500 nA
-
- -500 nA
-
- -300 mV
100 250 600 -
7 10 13 kΩ
- 250 - MHz
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20161006 - Rev.001
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