DTA114TEB Datasheet, PDF (2/3 Pages) Rohm – -100mA / -50V Digital transistors

Transistors
! DTA114TEB
!!!!!!!!!!!!!!
zElectrical characteristics (Ta=25qC)
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Input resistance
∗ Characteristics of built-in transistor
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT ∗
R1
Min. Typ. Max. Unit
Conditions
−50
−
−
V IC=−1mA
−50
−
−
V IC=−50μA
−5
−
−
V IE=−50μA
−
− −500 nA VCB=−50V
−
− −500 nA VEB=−4V
−
− −0.3 V IC/IB=−10mA/−1mA
100 250 600
− VCE=−5V, IC=−1mA
−
250
− MHz VCE=−10V, IE=5mA, f=100MHz
7
10 13 kΩ
−
zElectrical characteristic curves
1k
VCE=−5V
500
200
100
Ta=100°C
25°C
50
−40°C
20
10
5
2
1
−100μ −200μ −500μ −1m −2m −5m −10m −20m −50m−100m
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain vs. collector
current
−1
lC/lB=20
−500m
−200m
Ta=100°C
25°C
−100m
−40°C
−50m
−20m
−10m
−5m
−2m
−1m
−100μ −200μ −500μ −1m −2m −5m −10m −20m −50m−100m
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-emitter saturation
voltage vs. collector current
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