DTA114T Datasheet, PDF (2/13 Pages) Unisonic Technologies – DIGITAL TRANSISTORS (BUILT- IN BIAS RESISTORS)

DTA114T series
　
lAbsolute maximum ratings (T_a = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DTA114TM
DTA114TEB
Power dissipation
DTA114TE
DTA114TUB
DTA114TUA
DTA114TKA
Junction temperature
Range of storage temperature
　 　 　 　 　 　 　 　 _Datasheet
Symbol
Values
Unit
V_CBO
-50
V
V_CEO
-50
V
V_EBO
-5
V
I_C
-100
mA
150
150
150
P_D*1
mW
200
200
200
T_j
150
℃
T_stg
-55 to +150
℃
lElectrical characteristics (T_a = 25°C)
Parameter
Symbol
Conditions
Collector-base breakdown
voltage
BV_CBO I_C = -50μA
Collector-emitter breakdown
voltage
BV_CEO I_C = -1mA
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Input resistance
BV_EBO
I_CBO
I_EBO
V_CE(sat)
h_FE
R₁
I_E = -50μA
V_CB = -50V
V_EB = -4V
I_C = -10mA, I_B = -1mA
V_CE = -5V, I_C = -1mA
-
Transition frequency
f
*2
T
V_CE = -10V, I_E = 5mA,
f = 100MHz
*1 Each terminal mounted on a reference land.
*2 Characteristics of built-in transistor
Values
Unit
Min. Typ. Max.
-50 -
-
V
-50 -
-
V
-5
-
-
V
-
- -500 nA
-
- -500 nA
-
- -300 mV
100 250 600 -
7 10 13 kΩ
- 250 - MHz
　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　
　
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
2/9
　　 　 　 　　　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　
20151211 - Rev.002