DTA114GUA Datasheet, PDF (2/3 Pages) Rohm – Digital transistors (built-in resistor)

Transistors
DTA114GUA / DTA114GKA / DTA114GSA
!Electrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage BVCBO −50 − − V IC= −50µA
Collector-emitter breakdown voltage BVCEO −50 − − V IC= −1mA
Emitter-base breakdown voltage
BVEBO −5 −
−
V IE= −720µA
Collector cutoff current
ICBO
−
− −0.5 µA VCB= −50V
Emitter cutoff current
IEBO −300 − −580 µA VEB= −4V
Collector-emitter saturation voltage VCE(sat) − − −0.3 V IC= −10mA, IB= −0.5mA
DC current transfer ratio
hFE
30 −
−
− IC= −5mA, VCE= −5V
Emitter-base resistance
Transition frequency
R1
7 10 13 kΩ
−
fT
− 250 − MHz VCE= −10V, IE=50mA, f=100MHz ^∗
∗Transition frequency of the device.
!Electrical characteristics curves
Ta=25˚C
500 ^VO=5V
200
100
50
20
10
5
2
0.5 1 2
5 10 20 50 100
COLLECTOR CURRENT : Ic (mA)
Fig.1 DC Current gain
vs. Collector Current
1000
Ta=25˚C
500
200
100
IC / IB=20 / 1
IC / IB=10 / 1
50
20
10
12
5 10 20
50 100
COLLECTOR CURRENT : VDS (V)
Fig.2 Collector-emitter saturation voltage
vs. Collector Current
2/2