DTA114E_12 Datasheet, PDF (2/11 Pages) Rohm – PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)

DTA114E series
Absolute maximum ratings (Ta = 25C)
Parameter
Supply voltage
Input voltage
Output current
Collector current
Power dissipation
DTA114EM
DTA114EEB
DTA114EE
DTA114EUB
DTA114EUA
DTA114EKA
Junction temperature
Range of storage temperature
Symbol
V_CC
V_IN
I_O
I_C(MAX.)*1
P_D ^*2
T_j
T_stg
Data Sheet
Values
Unit
50
V
40 to 10
V
50
mA
100
mA
150
mW
200
mW
150
C
55 to 150
C
Electrical characteristics(Ta = 25C)
Parameter
Symbol
Input voltage
V_I(off)
V_I(on)
Output voltage
V_O(on)
Input current
Output current
I_I
I_O(off)
DC current gain
G_I
Input resistance
R₁
Resistance ratio
R₂/R₁
Conditions
V_CC = 5V, I_O = 100μA
V_O = 0.3V, I_O = 10mA
I_O / I_I = 10mA / 0.5mA
V_I = 5V
V_CC = 50V, V_I = 0V
V_O = 5V, I_O = 5mA
-
-
Transition frequency
f_T ^*1
V_CE = 10V, I_E = 5mA,
f = 100MHz
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
Min.
-
3
-
-
-
20
7
0.8
-
Typ. Max. Unit
-
0.5
V
-
-
0.1 0.3
V
- 0.88 mA
-
0.5 A
-
-
-
10
13
k
1
1.2
-
250
-
MHz
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2012.02 - Rev.E