DTA114EMFHA Datasheet, PDF (2/8 Pages) Rohm – PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor)

DTA114EM FHA
　
lAbsolute maximum ratings (T_a = 25°C)
Parameter
Supply voltage
Input voltage
Output current
Collector current
Power dissipation
Junction temperature
Range of storage temperature
　 　 　 　 　 　 　 　 _Datasheet
Symbol
Values
Unit
V_CC
-50
V
V_IN
-40 to 10
V
I_O
-50
mA
I_C(MAX)*1
-100
mA
P_D*2
150
mW
T_j
150
℃
T_stg
-55 to +150
℃
lElectrical characteristics (T_a = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
V_I(off) V_CC = -5V, I_O = -100μA _-
- -0.5
V
V_I(on) V_O = -0.3V, I_O = -10mA _-3.0
-
-
V_O(on) I_O = -10mA, I_I = -0.5mA _{- -100 -300 mV}
I_I V_I = -5V
-
- -880 μA
I_O(off) V_CC = -50V, V_I = 0V
-
- -500 nA
G_I V_O = -5V, I_O = -5mA
30 -
-
-
R₁
-
7 10 13 kΩ
R₂/R₁
-
0.8 1.0 1.2 -
Transition frequency
f
*1
T
V_CE = -10V, I_E = 5mA,
f = 100MHz
- 250 - MHz
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference land
　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　
　
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