DTA113TKA Datasheet, PDF (2/3 Pages) Rohm – Digital transistor (built in resistor)

Transistors
zExternal characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
∗ Transition frequency of the device.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R1
fT
DTA113TKA
Min. Typ. Max. Unit
Conditions
−50
−
−
V IC= −50µA
−50
−
−
V IC= −1mA
−5
−
−
V IE= −50µA
−
−
−0.5 µA VCB= −50V
−
−
−0.5 µA VEB= −4V
−
− −0.3 V −5mA / −0.25mA
100 250 600
− IC= −1mA , VCE= −5V
0.7
1
1.3 kΩ
−
−
250
−
∗ ^{MHz VCB= −10V , IE=5mA , f=100MHz}
zElectrical characteristics curves
1k
500
VCE= −5V
200
100
50
Ta=100°C
25°C
−40°C
20
10
5
2
1
−100µ −200µ −500µ −1m −2m
−5m −10m −20m −50m −100m
COLLECTOR CURRENT : IC (A)
Fig.1 DC Current gain
vs. Collector Current
−1m
−500m
−200m
−100m
−50m
Ta=100°C
25°C
−40°C
IC/IB=20
−20m
−10m
−5m
−2m
−1m
−100µ −200µ
−500µ −1m −2m
−5m −10m −20m −50m −100m
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-emitter saturation voltage
vs. Collector Current
Rev.A
2/2