DTA015T Datasheet, PDF (2/8 Pages) Rohm – Digital Transistors

DTA015T series
　
lAbsolute maximum ratings (T_a = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DTA015TM
Power dissipation
DTA015TEB
DTA015TUB
Junction temperature
Range of storage temperature
　 　 　 　 　 　 　 　 _Datasheet
Symbol
Values
Unit
V_CBO
-50
V
V_CEO
-50
V
V_EBO
-5
V
I_C
-100
mA
150
P_D*1
150
mW
200
T_j
150
℃
T_stg
-55 to +150
℃
lElectrical characteristics (T_a = 25°C)
Parameter
Symbol
Conditions
Collector-base breakdown
voltage
BV_CBO I_C = -50μA
Collector-emitter breakdown
voltage
BV_CEO I_C = -1mA
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Input resistance
BV_EBO
I_CBO
I_EBO
V_CE(sat)
h_FE
R₁
I_E = -50μA
V_CB = -50V
V_EB = -4V
I_C / I_B = -5mA / -0.25mA
V_CE = -10V, I_C = -5mA
-
Transition frequency
f
*2
T
V_CE = -10V, I_E = 5mA,
f = 100MHz
*1 Each terminal mounted on a reference footprint
*2 Characteristics of built-in transistor
Values
Unit
Min. Typ. Max.
-50 -
-
V
-50 -
-
V
-5
-
-
V
-
- -0.5 μA
-
- -0.5 μA
- -0.05 -0.25 V
100 - 600 -
70 100 130 kΩ
- 250 - MHz
　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　
　
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