DAN235E Datasheet, PDF (2/4 Pages) Rohm – Band switching diode

Diodes
zElectrical characteristic curves (Ta=25°C)
100
10
Ta=75℃
Ta=125℃
1
0.1
100
10
1
Ta=25℃
0.1
Ta=-25℃
0.01
0.001
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
0.01
0
100 200 300 400 500 600 700 800 900 1000 1100
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
0.0001
0
5 10 15 20 25 30 35
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
DAN235E
10
f=1MHz
1
0.1
0
5 10 15 20 25 30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
860
0.2
1
0.18
Ta=25℃
Ta=25℃
0.9
850
IF=10mA
0.16
n=30pcs
0.14
VR=25V
n=30pcs
0.8
0.7
840
0.12
0.6
0.1
0.5
830
0.08
0.4
0.06
AVE:0.0285nA
0.3
820
0.04
0.2
AVE:834.0mV
0.02
0.1
810
0
0
VF DISPERSION MAP
IR DISPERSION MAP
Ta=25℃
VR=6V
f=1MHz
n=10pcs
AVE:0.865pF
Ct DISPERSION MAP
20
5
Ifsm
1cyc
4
15
8.3ms
3
10
2
5
1
AVE:5.60A
0
0
1
Ta=25℃
0.9
VR=6V
IF=10mA
0.8
RL=100Ω
0.7
Irr=0.1*IR
n=10pcs
0.6
0.5
0.4
0.3
0.2
AVE:1.20ns
0.1
0
Ta=25℃
f=100MHz
IF=2mA
n=10pcs
AVE:0.630Ω
IFSM DISRESION MAP
trr DISPERSION MAP
FORWARD CURRENT:IF(mA)
rf DISPERSION MAP
10
9
8
Ifsm
7
8.3ms 8.3ms
6
1cyc
5
4
3
2
1
0
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
10
1
0.1
Ifsm
t
1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
1000
Rth(j-a)
100
Rth(j-c)
Mounted on epoxy board
IM=1mA
IF=10mA
10
1ms ^time
300us
1
100
0.001 0.01 0.1 1 10 100 1000
TIME:t(s)
Rth-t CHARACTERISTICS
Rev.A
2/3