DAN217 Datasheet, PDF (2/3 Pages) Rohm – Switching diode

Diodes
zElectrical characteristic curves (Ta=25°C)
100
Ta=75℃
10000
Ta=125℃
1000
10
Ta=150℃
1
Ta=25℃ ₁₀₀
10
Ta=-25℃
1
Ta=150℃ _Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
0.1
0.1
0
100 200 300 400 500 600 700 800 900 100
FORWARD VOLTAGE：VF(mV)
0
VF-IF CHARACTERISTICS
0.01
0
10 20 30 40 50 60 70 80
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
10
1
0.1
0
DAN217
f=1MHz
5
10
15
20
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
950
100
Ta=25℃
90
940
IF=100mA
80
n=30pcs
70
930
60
50
920
40
30
910
20
10
AVE:921.7mV
900
0
VF DISPERSION MAP
10
Ta=25℃
9
VR=80V
8
n=10pcs
7
6
5
4
AVE:9.655nA
3
2
1
0
IR DISPERSION MAP
Ta=25℃
VR=6V
f=1MHz
n=10pcs
AVE:1.17pF
Ct DISPERSION MAP
20
10
5
9
Ifsm
1cyc
8
15
8.3ms
7
6
Ta=25℃
VR=6V
IF=5mA
4
RL=50Ω
n=10pcs
3
Ifsm
8.3ms 8.3ms
1cyc
10
5
4
2
3
5
2
1
AVE:3.50A
0
IFSM DISRESION MAP
1
AVE:1.93ns
0
trr DISPERSION MAP
0
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
10
1
0.1
Ifsm
t
1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
1000
10
9
8
7
100
6
5
Moｶuﾞnﾗteｽdｴoﾎnﾟｷepｼo基xy板bo実ard装時
4
10
IM=IM10=01mmAA IF=1IF0=A10mA
3
2
1ms1mstimetime
1
3003u0s0us
1
0
100
0.001
0.1 _TIME:t(s) 10
1000
Rth-t CHARACTERISTICS
AVE:0.97kV
AVE:2.54kV
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
Rev.B
2/2