DAN212KT146 Datasheet, PDF (2/3 Pages) Rohm – Ultra high-speed switching diode arrays

Diodes
!Equivalent circuits
(1)
(2)
(3)
DAN202K
DAN202U
DAN222
DA114/DA121/DA227/DAN202K/DAN202U
DAN212K/DAN222/DAP202K/DAP202U/DAP222
(1)
(2)
(3)
DAP202K
DAP202U
DAP222
(2)
(3)
DA114
DA121
DAN212K
(1)
(4)
(2)
(3)
DA227
!Absolute maximum ratings (Ta=25°C)
Type
Peak reverse
voltage
VRM (V)
DC reverse
voltage
VR (V)
Peak forward
current
IFM (mA)
Mean rectifying
current
IO (mA)
Surge current
(1µs)
Isurge (A)
Power
dissipation
(TOTAL)
Pd(mW)
Junction
temperature
Tj (ºC)
Storage
temperature
Tstg (ºC)
TYPE
DA114
80
80
300
100
4
200
150 −55~+150 N
DA121
80
80
300
100
4
150
150 −55~+150 N
DAN202K 80
80
300
100
4
200
150 −55~+150 N
DAP202K 80
80
300
100
4
200
150 −55~+150 P
DAN202U 80
80
300
100
4
150
150 −55~+150 N
DAP202U 80
80
300
100
4
150
150 −55~+150 P
DAN212K 80
80
300
100
4
200
150 −55~+150 N
DAN222 80
80
300
100
4
150
150 −55~+150 N
DAP222
80
80
300
100
4
150
150 −55~+150 P
DA227
80
80
300
100
4
150
150 −55~+150 N
!Electrical characteristics (Ta=25°C)
Type
DA114
DA121
DAN202K
DAP202K
DAN202U
DAP202U
DAN212K
DAN222
DAP222
DA227
Forward voltage
VF (V) ^Cond.
Max. _{IF (mA)}
1.2
100
1.2
100
1.2
100
1.2
100
1.2
100
1.2
100
1.2
100
1.2
100
1.2
100
1.2
100
Reverse current Capacitance between terminals
IR (µA) ^Cond. CT (pF)
Cond.
Max.
VR (V) ^Max.
VR (V) f (MHz)
0.1
70
3.5
6
1
0.1
70
3.5
6
1
0.1
70
3.5
6
1
0.1
70
3.5
6
1
0.1
70
3.5
6
1
0.1
70
3.5
6
1
0.1
70
3.5
6
1
0.1
70
3.5
6
1
0.1
70
3.5
6
1
0.1
70
3.5
6
1
Reverse recovery time
trr (ns)
Max.
Cond.
VR (V)
IF (mA)
4
6
5
4
6
5
4
6
5
4
6
5
4
6
5
4
6
5
4
6
5
4
6
5
4
6
5
4
6
5