BU7481G Datasheet, PDF (2/5 Pages) Rohm – SILICON MONOLITHIC INTEGRATED CIRCUIT

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○ELECTRICAL CHARACTERISTICS (unless otherwise specified VDD=+3[V]、VSS=0[V])
Parameter
Symbol
Input offset voltage (*4)(*6)
Vio
Input offset current (*4)
Iio
Temperature
range
25℃
25℃
Guaranteed Limit
Min.
-
Typ.
1
Max.
8
-
1
-
Unit
mV
pA
Condition
Input bias current (*4)
Ib
25℃
-
1
-
pA
Supply current(*6)
25℃
-
ICC
Full range -
420
-
750
900
μA
RL=∞ All Op-Amps
AV=0[dB],VIN=0.9[V]
High level output voltage
VOH
25℃ VDD-0.1 -
-
V RL=10[kΩ]
Low level output voltage
VOL
25℃
-
- VSS+0.1 V RL=10[kΩ]
Large signal voltage gain
AV
25℃
70
105
-
dB RL=10[kΩ]
Input common mode voltage
Vicm
25℃
0
-
1.8
V VSS～VDD-1.2
Common mode rejection ratio
CMRR
25℃
45
60
-
dB
Power supply rejection ratio
PSRR
25℃
60
80
-
dB
Output source current (*5)
IOH
25℃
5
8
-
mA VDD-0.4[V]
Output sink current (*5)
IOL
25℃
9
16
-
mA VSS+0.4[V]
Slew rate
SR
25℃
-
3.2
-
V/μs CL=25[pF]
Gain band width
FT
25℃
-
2.8
-
MHz CL=25[pF], AV=40[dB]
Phase margin
θ
25℃
-
50°
-
CL=25[pF], AV=40[dB]
Total harmonics distortion
THD
25℃
-
0.03
-
% VOUT=0.8[Vp-p],f=1[kHz]
(*4) Absolute value
(*5) Reference to power dissipation under the high temperature environment and decide the output current.
Continuous short circuit is occurring the degenerate of output current characteristics.
(*6) Full range BU7481:-40[℃]～+85[℃] BU7481S:-40[℃]～+105[℃]
REV. B