BU7150NUV Datasheet, PDF (2/17 Pages) Rohm – Headphone Amplifier Designed for 0.93V Low Voltage Operation

BU7150NUV
Technical Note
●Electrical characteristics
Ta=25°C, VDD=1.5V, f=1kHz, VSS=GND unless otherwise specified.
Parameter
Symbol
Min.
Limits
Typ.
Max.
No Signal Operating Current
IDD
-
1
1.4
Unit
Conditions
mA No load, No signal
Shutdown Current
ISD
-
3
9
μA SDB Pin=VSS
Mute Current
IMUTE -
15
-
μA MUTEB Pin=VSS, SE
Output Offset Voltage
VOFS -
5
50
mV | VOUT1 – VOUT2 |, No signal
Maximum Output Power
70
85
PO
-
14
-
mW RL=8Ω, BTL, THD+N=1%
-
mW RL=16Ω, SE, THD+N=1%
-
Total Harmonic Distortion +Noise THD+N
-
0.2
0.5
0.1
0.5
% 20kHz LPF, RL=8Ω, BTL, PO=25mW
% 20kHz LPF, RL=16Ω, SE,PO=5ｍW
Output Voltage Noise
VNO
-
10
-
μV_rms 20kHz LPF + A-weight
Crosstalk
CT
-
85
-
dB RL=16Ω, SE, 1kHz BPF
Power Supply Rejection Ratio
-
PSRR
-
62
66
-
-
dB
Ripple voltage=200mV_P-P,
RL=8Ω, BTL, C_BYPASS=4.7μF
dB
Ripple voltage=200mV_P-P,
RL=16Ω, SE, C_BYPASS=4.7μF
Input Logic High Level
VIH
0.7
-
-
V MUTEB Pin, SDB Pin
Input Logic Low Level
VIL
-
-
0.3
V MUTEB Pin, SDB Pin
“BTL” is BTL-mode when MODE Pin = VDD, “SE” is single-ended mode when MODE Pin = VSS.
Turn-on time in BTL mode is about 11 times faster than single-ended mode.
Also, BTL mode does not have MUTE mode. When MUTEB Pin = VSS, then it will be shutdown mode.
●Block diagram
IN1 1
SDB 2
MUTEB 3
BYPASS 4
IN2 5
Control Logic
Bias
Generator
TOP VIEW
Fig. 1 Block diagram
10 VDD
9 OUT1
8 MODE
7 OUT2
6 VSS
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2/16
2011.05 - Rev.C