BR25G256-3 Datasheet, PDF (2/35 Pages) Rohm – SPI BUS EEPROM

BR25G256-3
Datasheet
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Ratings
Unit
Remarks
Supply Voltage
VCC
-0.3 to +6.5
V
0.80 (DIP-T8)
When using at Ta=25°C or higher 8.0mW to be reduced per 1°C.
Power Dissipation
Pd
0.45 (SOP8)
0.45 (SOP-J8)
W
When using at Ta=25°C or higher 4.5mW to be reduced per 1°C.
When using at Ta=25°C or higher 4.5mW to be reduced per 1°C.
0.33 (TSSOP-B8)
When using at Ta=25°C or higher 3.3mW to be reduced per 1°C.
Storage Temperature
Tstg
- 65 to +150
°C
Operating Temperature
Topr
- 40 to +85
°C
Input Voltage /
Output Voltage
The Max value of Input Voltage/Output Voltage is not over 6.5V.
‐
- 0.3 to Vcc+1.0
V
When the pulse width is 50ns or less, the Min value of Input
Voltage/Output Voltage is not under -1.0V.
Junction temperature
Tjmax
150
°C Junction temperature at the storage condition
Electrostatic discharge
voltage
(human body model)
VESD
-4000 to +4000 V
Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over
the absolute maximum ratings.
Memory Cell Characteristics (Ta=25°C, Vcc=1.6V to 5.5V)
Parameter
Write Cycles ^(Note1)
Data Retention ^(Note1)
Min
1,000,000
100
Limits
Typ
-
-
Max
-
-
(Note1) Not 100% TESTED
Unit
Times
Years
Recommended Operating Ratings
Parameter
Symbol
Power Source Voltage
Vcc
Input Voltage
VIN
Bypass Capacitor
C
Ratings
Min
Max
Unit
1.6
5.5
V
0
Vcc
V
0.1
-
µF
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TSZ02201-0R2R0G100640-1-2
04.Dec.2014 Rev.002