BD95371MUV Datasheet, PDF (2/5 Pages) Rohm – Silicon Monolithic Integrated Circuit

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○ELECTRICAL CHARACTERISTICS （unless otherwise noted, Ta=25℃ VCC=5V,VDD=5V,EN=3V,VIN=12V,VOUT=1.05V,R_FS=36kΩ）
Parameter
[Whole Device]
VCC Bias Current
VCC Standby Current
VIN Bias Current
VIN Standby Current
EN Low Voltage
Symbol
Icc
Iccstb
Iin
Iinstb
VEN_low
Standard Value
MIN
TYP
MAX
-
-
-
-
GND
1500
0
30
0
-
1800
10
80
10
0.8
Unit
Condition
μA
μA EN＝0Ｖ
μA
μA EN＝0Ｖ
V
EN HighVoltage
(Forced Continuous mode)
VENth_con
2.3
-
3.8
V
EN HighVoltage (SLLM Mode)
VENth_sllm
4.5
-
5.5
V
EN Bias Current
Ien
-
15
25
μA EN=3V
[Under Voltage Locked Out ]
VCC threshold voltage
VCC hysteresis voltage
[H³REG Control]
ON Time
MAX ON Time
Vcc_UVLO
3.7
4.0
4.3
V VCC:Sweep up
dVcc_UVLO
100
160
220
mV VCC:Sweep down
Ton
Tonmax
194
219
244
ns
-
3.5
-
μs
MIN OFF Time
[FET Driver]
HG Higher side ON resistor
HG Lower side ON resistor
LG Higher side ON resistor
LG Lower side ON resistor
Toffmin
HGhon
HGlon
LGhon
LGlon
-
490
700
ns
-
3.0
6.0
Ω
-
2.0
4.0
Ω
-
3.0
6.0
Ω
-
0.5
1.0
Ω
[SCP]
SCP strat-up Voltage
SCP delay time
Vscp
Tscp
0.345
0.420
0.495
V
-
2.5
-
ms
[OVP]
FB threshold voltage
[Soft start]
Charge current
Standby voltage
[Current Limit Block]
Setting Current
Vovp
Iss
Vss_stb
Iilim
0.825
0.900
0.975
V
1
2
3
μA
-
-
50
mV
-
10
-
μA
Current limit threshold
[Output Voltage setting ]
VOUT typical voltage
Is+ Input current
Is- Input current
Ilim
REF
IIs+
IIs-
75
0.743
-1
-1
100
0.750
0
0
125
0.757
1
1
mV RILIM=100kΩ
V
μA Is+=1.05V
μA Is-=1.05V
[Power Good]
FB Power Good
Discharge ON resistor
V_PGOOD
0.38
0.47
0.56
V
Ronpgood
-
50
150
Ω
[BOOT Diode]
VF voltage
VF
0.4
0.5
0.6
V IF=1mA
REV. A