BD52XXG_09 Datasheet, PDF (2/10 Pages) Rohm – Free Delay Time Setting CMOS Voltage Detector IC Series

BD52□□G, BD52□□FVE, BD53□□G, BD53□□FVE series
Technical Note
 Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Power Supply Voltage
VDD-GND
-0.3 ~ +10
V
Output Voltage
Power
Dissipation
Nch Open Drain Output
CMOS Output
SSOP5
*1*3
VSOF5
*2*3
VOUT
Pd
GND-0.3 ~ +10
V
GND-0.3 ~ VDD+0.3
540
mW
210
Operating Temperature
Topr
-40 ~ +105
°C
Ambient Storage Temperature
Tstg
-55 ~ +125
°C
*1 Use above Ta=25°C results in a 5.4mW loss per degree.
*2 Use above Ta=25°C results in a 2.1mW loss per degree.
*3 When a ROHM standard circuit board (70mm×70mm×1.6mm glass epoxy board) is mounted.
 Electrical characteristics (Unless Otherwise Specified Ta=-40 to 105°C)
Parameter
Symbol
Condition
Detection Voltage
Circuit Current when ON
Circuit Current when OFF
Operating Voltage Range
‘Low’ Output Current (Nch)
‘High’ Output Current (Pch)
Leak Current when OFF
V_DET
IDD1
IDD2
VOPL
IOL
IOH
Ileak
VDD=HL, RL=470kΩ
*1
V_DET =2.3-3.1V
VDD=VDET-0.2V
V_DET =3.2-4.2V
V_DET =4.3-5.2V
V_DET =5.3-6.0V
V_DET =2.3-3.1V
VDD=VDET+2.0V
V_DET =3.2-4.2V
V_DET =4.3-5.2V
V_DET =5.3-6.0V
VOL≤0.4V, Ta=25~105°C, RL=470kΩ
VOL≤0.4V, Ta=-40~25°C, RL=470kΩ
VDS=0.5V VDD=1.2V
VDS=0.5V VDD=2.4V
VDS=0.5V VDD=4.8V VDET=2.3-4.2V
VDS=0.5V VDD=6.0V VDET=4.3-5.2V
VDS=0.5V VDD=8.0V VDET=5.3-6.0V
VDD=VDS=10V
*1
VDD=VDET×1.1, VDET=2.3-2.6V, RL=470kΩ
CT pin Threshold Voltage
VCTH
VDD=VDET×1.1, VDET=2.7-4.2V, RL=470kΩ
VDD=VDET×1.1, VDET=4.3-5.2V, RL=470kΩ
VDD=VDET×1.1, VDET=5.3-6.0V, RL=470kΩ
Output Delay Resistance
RCT VDD=VDET×1.1 VCT=0.5V
*1
VCT=0.1V VDD=0.95V
*1
CT pin Output Current
ICT
VCT=0.5V VDD=1.5V
Detection Voltage
Temperature coefficient
VDET/∆T Ta=-40°C to 105°C
Hysteresis Voltage
∆VS VDD=LHL, RL=470kΩ
V_S(T) : Standard Detection Voltage (2.3V to 6.0V, 0.1V step)
R_L: Pull-up resistor to be connected between VOUT and power supply.
Designed Guarantee. (Outgoing inspection is not done on all products.)
*1 Guarantee is Ta=25°C.
Limit
Unit
Min.
Typ.
Max.
VDET(T)
×0.99
VDET(T)
VDET(T)
×1.01
V
-
0.80 2.40
-
0.85 2.55
µA
-
0.90 2.70
-
0.95 2.85
-
0.75 2.25
-
0.80 2.40
µA
-
0.85 2.55
-
0.90 2.70
0.95
-
1.20
-
-
V
-
0.4
1.2
2.0
5.0
0.7
1.4
-
mA
-
-
0.9
1.8
-
mA
1.1
2.2
-
-
-
0.1
µA
VDD
VDD
VDD
×0.30 ×0.40 ×0.60
VDD
VDD
VDD
×0.30 ×0.45 ×0.60
VDD
VDD
VDD
V
×0.35 ×0.50 ×0.60
VDD
VDD
VDD
×0.40 ×0.50 ×0.60
5.5
9
12.5
MΩ
15
40
-
µA
150
240
-
-
±100 ±360 ppm/°C
VDET
VDET
VDET
V
×0.03 ×0.05 ×0.08
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2009.06 - Rev.B