2SD2212 Datasheet, PDF (2/4 Pages) Rohm – Medium Power Transistor(Motor, Relay drive) (60±10V, 2A)

Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗ Measured using pulse current.
Symbol
BVCBO
BVCEO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
2SD2212 / 2SD2143 / 2SD1866
Min. Typ. Max. Unit
Conditions
50
−
70
V
IC=50µA
50
−
70
V
IC=5mA
−
−
1.0
µA VCB=40V
−
−
3
mA VEB=5V
−
−
1.5
V
IC/IB=1A/1mA
∗
1000
−
10000
−
VCE=2V, IC=1A
−
80
−
MHz VCE=5V, IE= −0.1A, f=30MHz
−
25
−
pF VCB=10V, IE=0A, f=1MHz
zElectrical characteristics curves
2.0
500µA
1.8
450µA
400µA
1.6
1.4
Ta=25°C
300^µA
250^µA
1.2
IB=200^µA
1.0
0.8
0.6
0.4
0.2
0
1
2
3
4
5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Groundede emitter output
characteristics ( Ι )
2.0
500µA
1.8 450µA
400µA
1.6 350µA
1.4
1.2
300^µA
250^µA
IB^=200µA
Ta=25°C
1.0
0.8
0.6
0.4
0.2
0
2
4
6
8
10
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics ( ΙΙ )
5
VCE=2V
2
1
0.5
0.2
0.1
0.05
0.01
0.001
0.5
1
1.5
2
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.3 Grounded emitter propagation
characteristics
10000
5000
2000
1000
500
200
100
50
Ta=25°C
VCE=4V
VCE=2V
20
10
0.001
0.01
0.1 0.2 0.5 1 2 5 10
COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain
vs. collector current ( Ι )
10000
5000
VCE=2V
2000
1000
500
200
100
50
25°C
20
10
0.001
0.01
0.1 0.2 0.5 1 2 5 10
COLLECTOR CURRENT : IC (A)
Fig.5 DC current gain
vs. collector current ( ΙΙ )
100
Ta=25°C
50
20
10
5
2
IC/IB=1000
1
500
0.5
0.2
0.01
0.1 0.2 0.5 1 2 5 10
COLLECTOR CURRENT : IC (A)
Fig.6 Collector-emitter saturation
voltage vs. collector current
Rev.A
2/3