2SD1949_11 Datasheet, PDF (2/3 Pages) Rohm – Medium Power Transistor (50V,0.5A)

2SD1949 / 2SD1484K
Data Sheet
Electrical characteristic curves
200
VCE=6V
100
50
20
10
5
2
1
0.5
0.2
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2
BASE TO VOLTAGE : VBE (V)
Fig.1 Ground emitter propagation
characteristics
100 _VCE=6V
0.50
0.45
80
0.40
0.35
60
0.30
0.25
40
0.20
0.15
20
0.10
0.05
IB=0mA
0
0
1
2
3
4
5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Ground emitter output characteristics
1000
500
200
100
Ta=25 C
VCE=3V
1V
50
0.1 0.2 0.5 1 2 5 10 20 50 100 200 500
COLLECTOR CURRENT IC (mA)
Fig.3 DC current gain vs. Collector current ( )
1000
500
200
Ta=75 C
25 C
-25 C
100
50
VCE=10V
0.5
0.2
0.1
0.05
Ta=25 C
IC/I^B=100/1
50/1
20/1
10/1
20
1 2 5 10 20 50 100 200 500 1000
COLLECTOR CURRENT IC (mA)
0.02 ₅
10 20
50 100 200 500
COLLECTOR CURRENT IC (mA)
Fig.4 DC current gain vs. Collector currnet ( )
Fig.5 Collector-emitter saturation voltage
vs. Collector current
IC/IB=10
0.5
0.2
0.1
0.05
Ta=75 C
25 C
-25 C
0.02
5 10 20 50 100 200 500 1000
COLLECTOR CURRENT IC (mA)
Fig.6 Collector-emitter saturation voltage
vs. collector current
Ta=25 C
f=1MHz
50
IE=0A
Cib
20
10
Cob
5
0.1 0.2 0.5 1 2
5 10 20
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.7 Input-and-output capacity
vs.voltage characteristic
Ta=25 C
500
VCE=6V
200
100
-1
-2 -5 -10 -20 -50
EMITTER CURRENT : IE (mA)
Fig.8 Transition frequency
vs.emitter current
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2011.06 - Rev. E