2SD1918_09 Datasheet, PDF (2/3 Pages) Rohm – Power Transistor (160V , 1.5A)

2SD1918 / 2SD1857A
Data Sheet
zElectrical characteristic curves
1.0 _Ta=25°C
0.8
0.6
10mA
98mmAA
7mA
6mA
5mA
4mA
0.4
3mA
2mA
0.2
IB=1mA
0
0
1
2
3
4
5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Ground emitter output characteristics
10
VCE=5V
5
2
1
Ta=100°C
0.5
0.2
0.1
0.05
Ta=25°C
Ta= −25°C
0.02
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.2 Ground emitter propagation characteristics
1000
Ta=25°C
500
200
100
VCE=10V
50
5V
20
10
5
2
1
0.01 0.02 0.05 0.1 0.2 0.5 1 2
5 10
COLLECTOR CURRENT : IC (A)
Fig.3 DC current gain vs. collector current ( Ι )
1000
500
Ta=100°C
200
100
50
25°C
20
−25°C
10
5
VCE=5V
2
1
0.01 0.02 0.05 0.1 0.2 0.5 1 2
5 10
COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain vs. collector current ( ΙΙ )
10
Ta=25°C
5
2
1
0.5
0.2
0.1
IC/IB=20
0.05
10
0.02
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1 2
5 10
COLLECTOR CURRENT : IC (A)
Fig.5 Collector-emitter saturation voltage
vs. collector current
10
IC/IB=10
5
2
1
Ta= −25°C
0.5
VBE(sat) 25°C ^100°C
0.2
0.1
0.05
−25°C
0.02 _VCE(sat)
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10
COLLECTOR CURRENT : IC (A)
Fig.6
Collector-emitter saturation voltage
Base-emitter saturation voltage
vs. collector current
1000
Ta=25°C
500
VCE=5V
200
100
50
20
10
5
2
1
−1 −2
−5 −10 −20 −50 −100 −200 −500 −1000
EMITTER CURRENT : IE (mA)
Fig.7 Gain bandwidth products vs. emitter current
1000
Ta=25°C
500
f=1MHz
IE=0A
200
100
50
20
10
5
2
1
0.1 0.2 0.5 1 2
5 10 20 50 100
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.8 Collector output capacitance
vs. collector-base voltage
10
5 _{Ic Max (Pulse∗)}
2
1
500m
Ta=25°C
∗Single
nonrepetitive
pulse
200m
100m
50m
20m
10m
5m
2m
1m
0.1 0.2 0.5 1 2
5 10 20 50 100 200 500 1000
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.9 Safe operating area (2SD1918)
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2009.12 - Rev.B