2SD1898 Datasheet, PDF (2/4 Pages) Rohm – Power Transistor (80V, 1A)

2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F
Transistors
!Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
100
Collector-emitter voltage
VCEO
80
Emitter-base voltage
VEBO
5
Collector current
1
IC
2
0.5
2SD1898
2
1
2SD1733
Collector power
10
dissipation
2SD1768S
PC
0.3
1
2SD1863
1.2
2SD1381F
5
Junction temperature
Tj
150
Storage temperature
Tstg
−55∼+150
∗1 Pw=20ms, duty=1 / 2
∗2 Printed circuit board 1.7mm thick, collector copper plating 1cm² or larger.
∗3 When mounted on a 40×40×0.7mm ceramic board.
Unit
V
V
V
A (DC)
A (Pulse) _∗1
W ∗3
W (Tc=25˚C)
W ∗2
W (Tc=25˚C)
˚C
˚C
!Electrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Collector-base breakdown voltage BVCBO 100
Collector-emitter breakdown voltage BVCEO 80
Emitter-base breakdown voltage BVEBO 5
Collector cutoff current
ICBO
−
Emitter cutoff current
IEBO
−
2SD1863
180
DC current ^{2SD1733, 2SD1898}
82
transfer ratio _2SD1768S
hFE
120
2SD1381F
82
Collector-emitter saturation voltage VCE(sat) −
Transition frequency
fT
−
Output capacitance
* Measured using pulse current
Cob
−
Typ.
−
−
−
−
−
−
−
−
−
0.15
100
20
Max.
−
−
−
1
1
390
390
390
270
0.4
−
−
Unit
V
V
V
µA
µA
−
−
−
−
V
MHz
pF
IC=50µA
IC=1mA
IE=50µA
VCB=80V
VEB=4V
Conditions
VCE=3V, IC=0.5A
∗
IC/IB=500mA/20mA
VCE=10V, IE=−50mA, f=100MHz
VCB=10V, IE=0A, f=1MHz