2SD1834 Datasheet, PDF (2/3 Pages) Rohm – MEDIUM POWER TRANSISTOR

Transistors
zPackaging specifications and hFE
Type
2SD1834
Package
MPT3
hFE
2k~
Marking
DE∗
Code
T100
Basic ordering unit (pieces)
1000
∗Denotes hFE
2SD1834
zElectrical characteristics curves
0.5
Ta=25°C
0.4
PC=0.5W
0.3
10µA
9µA
8µA
7µA
6µA
5µA
0.2
4µA
3µA
0.1
2µA
1µA
0
IB=0µA
0
1
2
3
4
5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Ground emitter output characteristics
1
Ta=25°C
VCE=3V
0.5
0.2
0.1
0.05
0.02
0.01
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.2 Ground emitter propagation
characteristics
500k
Ta=25°C
200k
100k
50k
20k
10k
VCE=5V
5k
3V
2k
1k
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5
COLLECTOR CURRENT : IC (A)
Fig.3 DC current gain vs. collector current
10
Ta=25°C
5
2
IC/IB=1000
1
500
0.5
0.2
0.1
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2
COLLECTOR CURRENT : IC (A)
Fig.4 Collector-emitter saturation voltage
vs. collector current
50
Ta=25°C
f=1MHz
IE=0A
20
10
5
2
1
0.5
0.5 1 2
5 10 20
50 100
COLLECTOR TO BASE VOLTAGE : VCB(V)
Fig.5 Collector output capacitance
vs. collector-base voltage
2 ^{Ic Max Pulse}
1 ^{Ic Max}
0.5
0.2
0.1
Ta=25°C
0.05
∗Single
nonrepetitive
pulse
0.5
12
5 10 20
50 100
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.6 Safe operating area
Rev.A
2/2