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2SD1766_09 Datasheet, PDF (2/4 Pages) Rohm – Medium power transistor (32V, 2A)
2SD1766 / 2SD1758 / 2SD1862
Electrical characteristics (Ta=25C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage BVCBO 40
−
−
V IC=50μA
Collector-emitter breakdown voltage BVCEO 32
−
−
V IC=1mA
Emitter-base breakdown voltage
BVEBO
5
−
−
V IE=50μA
Collector cutoff current
ICBO
−
−
1
μA VCB=20V
Emitter cutoff current
IEBO
−
−
1
μA VEB=4V
DC current transfer ratio
hFE 120 − 390 − VCE=3V, IC=0.5A
∗
Collector-emitter saturation voltage VCE(sat) −
0.5 0.8
V IC/IB=2A / 0.2A
∗
Transition frequency
fT
−
100
− MHz VCE=5V, IE=−50mA, f=100MHz ∗
Output capacitance
Cob
−
30
−
pF VCB=10V, IE=0A, f=1MHz
∗ Measured using pulse current.
Packaging specifications and hFE
Package
Type
2SD1766
Code
hFE
Basic ordering
unit (pieces)
QR
T100
1000
2SD1758 QR
−
2SD1862 QR
−
Taping
TL
2500
−
−
TV2
2500
−
−
hFE values are classified as follows :
Item
hFE
Q
R
120 to 270 180 to 390
Data Sheet
 Electrical characteristic curves
2000
1000
500
200
100
50
Ta=25°C
VCE=3V
20
10
5
2
1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
characteristics
Ta=25°C
500
200
100
IC/IB=50
50
20
20
10
5 10 20 50 100 200 500 1A 2A
COLLECTOR CURRENT : IC (mA)
Fig.4 Collector-emitter saturation
voltage vs. collector current
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0.5
Ta=25°C
3.0mA
0.4
0.3
0.2
2.7mA
2.4mA
2.1mA
1.8mA
1.5mA
1.2mA
0.9mA
0.6mA
0.1
0.3mA
0
IB=0A
0
0.4
0.8
1.2 1.6
2.0
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics
2
Ta=25°C
1
IC/IB=10
0.5
0.2
0.1
5 10 20 50 100 200 500 1A 2A
COLLECTOR CURRENT : IC (mA)
Fig.5 Collector-emitter saturation
voltage vs. collector current
2/3
Ta=25°C
500
200
VCE=3V
100
1V
50
20
5 10 20 50 100 200 500 1A 2A
COLLECTOR CURRENT : IC (mA)
Fig.3 DC current gain vs. collector
current
1000
500
Ta=25°C
VCE=5V
200
100
50
20
−1 −2 −5 −10 −20 −50 −100−200 −500 −1A
EMITTER CURRENT : IE (mA)
Fig.6 Transition frequency vs. emitter
current
2009.12 - Rev.B