2SCR586D Datasheet, PDF (2/9 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

2SCR586D
　 　 　 　　 ^　
lAbsolute maximum ratings (T_a = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
　 　 　 　 　 　 　 　 _Datasheet
Symbol
Values
Unit
V_CBO
80
V
V_CEO
80
V
V_EBO
6
V
I_C
5
A
I_CP*1
10
A
P_D*2
10
W
T_j
150
℃
T_stg
-55 to +150
℃
lElectrical characteristics (T_a = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Collector-base breakdown voltage BV_CBO I_C = 100μA
80
-
-
V
Collector-emitter breakdown
voltage
BV_CEO I_C = 1mA
80
-
-
V
Emitter-base breakdown voltage BV_EBO I_E = 100μA
6
-
-
V
Collector cut-off current
I_CBO V_CB = 80V
-
- 1.0 μA
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
I_EBO V_EB = 4V
V_CE(sat)*3 ^I_C ^{= 2A, I}_B ^{= 100mA}
h_FE*3 ^V_CE ^{= 3V, I}_C ^{= 500mA}
-
- 1.0 μA
- 100 300 mV
120 - 390 -
Transition frequency
f _T*3
V_CE = 10V, I_E = -500mA,
f = 100MHz
-
200
-
MHz
Output capacitance
C_ob
V_CB = 10V, I_E = 0A,
f = 1MHz
-
50
-
pF
Turn-On time
Storage time
Fall time
*1　Pw=10ms Single Pulse
*2　Tc=25℃
*3　PULSED
t_on I_C = 2.5A,
I_B1 = 250mA,
t_stg
I_B2 = -250mA,
V_CC ⋍ 10V,
R_L = 3.9Ω
t_{f See test circuit}
-
45
-
ns
- 700 -
ns
- 180 -
ns
　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　
　
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20161012 - Rev.002