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2SCR574DA07 Datasheet, PDF (2/7 Pages) Rohm – NPN 2.0A 80V Middle Power Transistor | |||
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2SCR574D A07
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lAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Power dissipation
Junction temperature
Range of storage temperature
ã ã ã ã ã ã ã ã Datasheet
Symbol
Values
Unit
VCBO
80
V
VCEO
80
V
VEBO
6
V
IC
2
A
ICP*1
4
A
IB
0.5
A
PD*2
10
W
Tj
150
â
Tstg
-55 to +150
â
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Collector-base breakdown
voltage
BVCBO IC = 100μA
80 -
-
V
Collector-emitter breakdown
voltage
BVCEO IC = 1mA
80 -
-
V
Emitter-base breakdown voltage BVEBO IE = 100μA
6
-
-
V
Collector cut-off current
ICBO VCB = 80V
-
-
1 μA
Emitter cut-off current
IEBO VEB = 4V
-
-
1 μA
Collector-emitter saturation voltage VCE(sat) IC = 1A, IB = 50mA
- 100 300 mV
Base-emitter turn on voltage
VBE(ON)*3
VCE = 1.7V, IC = 1A
Ta = -40â
-
- 1.0 V
DC current gain
hFE VCE = 3V, IC = 100mA 120
-
360
-
Transition frequency
f
*4
T
VCE = 10V, IE = -500mA,
f = 100MHz
-
280
-
MHz
Output capacitance
Cob
VCB = 10V, IE = 0A,
f = 1MHz
Turn-On time
Storage time
Fall time
ton*5 IC = 1A, VCC = 10V
tstg*5 IB1 = 100mA
tf*5 IB2 = -100mA
*1ãPw=10ms 1PULSE ããã*2ãTc=25â
*3ãGUARANTEED IN THE DESIGN
*4ãPULSED
*5ãSEE SWITCHING TIME TEST CIRCUIT
-
20
-
pF
-
90
-
ns
- 600 -
ns
- 150 -
ns
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20131219 - Rev.001
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