2SCR573DA08 Datasheet, PDF (2/7 Pages) Rohm – NPN 3.0A 50V Middle Power Transistor

2SCR573D A08
　 　 　 　　 ^　
lAbsolute maximum ratings (T_a = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Power dissipation
Junction temperature
Range of storage temperature
　 　 　 　 　 　 　 　 _Datasheet
Symbol
Values
Unit
V_CBO
50
V
V_CEO
50
V
V_EBO
6
V
I_C
3
A
I_CP*1
6
A
I_B
0.8
A
P_D*2
10
W
T_j
150
℃
T_stg
-55 to +150
℃
lElectrical characteristics (T_a = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Collector-base breakdown
voltage
BV_CBO I_C = 100μA
50 -
-
V
Collector-emitter breakdown
voltage
BV_CEO I_C = 1mA
50 -
-
V
Emitter-base breakdown voltage BV_EBO I_E = 100μA
6
-
-
V
Collector cut-off current
I_CBO V_CB = 50V
-
-
1 μA
Emitter cut-off current
I_EBO V_EB = 4V
-
-
1 μA
Collector-emitter saturation voltage V_CE(sat) I_C = 1A, I_B = 50mA
- 130 350 mV
Base-emitter turn on voltage
V_BE(ON)*3
V_CE = 1.7V, I_C = 1A
T_a = -40℃
-
- 1.0 V
DC current gain
h_FE V_CE = 3V, I_C = 100mA 180
-
450
-
Transition frequency
f
*4
T
V_CE = 10V, I_E = -600mA,
f = 100MHz
-
320
-
MHz
Output capacitance
C_ob
V_CB = 10V, I_E = 0A,
f = 1MHz
Turn-On time
Storage time
Fall time
t_on*5 I_C = 1.5A, V_CC = 10V
t_stg*5 I_B1 = 150mA
t_f*5 I_B2 = -150mA
*1　Pw=10ms 1PULSE 　　　*2　T_c=25℃
*3　GUARANTEED IN THE DESIGN
*4　PULSED
*5　SEE SWITCHING TIME TEST CIRCUIT
-
20
-
pF
-
70
-
ns
- 400 -
ns
- 120 -
ns
　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　
　
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