2SCR553PT100 Datasheet, PDF (2/7 Pages) Rohm – NPN 2.0A 50V Middle Power Transistor

2SCR553P
Data Sheet
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Min.
Collector-emitter
breakdown voltage
BV_CEO I_C = 1mA
50
Collector-base
breakdown voltage
BV_CBO I_C = 100mA
50
Emitter-base
breakdown voltage
BV_EBO I_E = 100mA
6
Collector cut-off current
I_CBO V_CB = 50V
-
Emitter cut-off current
I_EBO V_EB = 4V
-
Collector-emitter
saturation voltage
V_CE(sat) ^{*1 I}_C ^{= 700mA, I}_B ^{= 35mA}
-
DC current gain
h_FE V_CE = 2V, I_C = 50mA
180
Transition frequency
Output capacitance
f_T
V_CE = 10V, I_E = -300mA
f=100MH_Z
-
C_ob
V_CB = 10V, I_E = 0A,
f = 1MHz
-
Turn-on time
Storage time
Fall time
t_on ^*2
I_C=1A
-
t_stg ^*2
I_B1=100mA
I_B2= -100mA
-
t_f ^*2
V_CC⋍10V
-
*1 Pulsed
*2 See switching time test circuit
Typ.
-
-
-
-
-
0.13
-
360
12
45
420
75
Max.
-
-
-
1
1
0.35
450
-
-
-
-
-
Unit
V
V
V
mA
mA
V
-
MHz
pF
ns
ns
ns
lSwitching time test circuit
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2013.04 - Rev.B