2SCR542F3 Datasheet, PDF (2/8 Pages) Rohm – NPN 3.0A 30V Middle Power Transistor

2SCR542F3
　 　 　 　　 ^　
lAbsolute maximum ratings (T_a = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Power dissipation
Junction temperature
Range of storage temperature
　 　 　 　 　 　 　 　 _Datasheet
Symbol
Values
Unit
V_CBO
30
V
V_CEO
30
V
V_EBO
6
V
I_C
3
A
I_CP*1
6
A
I_B
500
mA
P_D*2
1.0
W
P_D*3
2.1
W
T_j
150
℃
T_stg
-55 to +150
℃
lElectrical characteristics (T_a = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Collector-base breakdown
voltage
BV_CBO I_C = 100μA
30 -
-
V
Collector-emitter breakdown
voltage
BV_CEO I_C = 1mA
30 -
-
V
Emitter-base breakdown voltage BV_EBO I_E = 100μA
6
-
-
V
Collector cut-off current
I_CBO V_CB = 30V
-
- 100 nA
Emitter cut-off current
I_EBO V_EB = 4V
-
- 100 nA
Collector-emitter saturation voltage V_CE(sat) I_C = 1A, I_B = 50mA
- 90 200 mV
DC current gain
h_FE V_CE = 2V, I_C = 500mA 200
-
500
-
Transition frequency
f_T
V_CE = 10V, I_E = -100mA, _-
f = 100MHz
250
-
MHz
Output capacitance
C_ob
V_CB = 10V, I_E = 0mA,
f = 1MHz
-
25
-
pF
Turn-On time
Storage time
Fall time
t_on*4 I_C = 2.5A, V_CC = 10V
t_stg*4 I_B1 = 250mA
t_f*4 I_B2 = -250mA
-
40
-
ns
- 320 -
ns
-
25
-
ns
*1　Pw=1ms 1PULSE
*2　Mounted on FR4 board(25.4×25.4×1.6mm, Cu PAD：645mm²).
*3　Pw=10ms
　　Mounted on FR4 board(25.4×25.4×1.6mm, Cu PAD：645mm²).
*4　SEE SWITCHING TIME TEST CIRCUIT
　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　
　
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20140325 - Rev.001