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| 2SCR514P_09 Datasheet, PDF (2/5 Pages) Rohm – Midium Power Transistors (80V / 700mA) | |||
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2SCR514P
ï¬Electrical characteristic (Ta = 25ï°C)ï
Parameter
Symbol Min.
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter staturation voltage
DC current gain
BVCEO
BVCBO
BVEBO
ICBO
IEBO
VCE(sa*t1)
hFE
80
80
6
-
-
-
120
Transition frequency
fT *1
-
Collector output capacitance
Turn-on time
Storage time
Fall time
*1 Pulsed
*2 See switching time test circuit
Cob
-
ton *2
-
tstg *2
-
tf *2
-
Data Sheet
Typ.
-
-
-
-
-
100
-
320
6
50
650
100
Max.
-
-
-
1
1
300
390
-
-
-
-
-
Unit
Conditions
V IC= 1ï½A
V IC= 100μA
V IE= 100μA
ïA VCB= 80V
ïA VEB= 4V
mV IC= 300mA, IB= 15mA
- VCE= 3V, IC= 100mA
MHz
VCE= 10V
IE=-200mA, f=100MHz
pF
VCB= 10V, IE=0A
f=1MHz
ns
ns
IC= 0.35A,IB1= 35mA,
IB2=-35mA,VCC~_ 10V
ns
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âc 2009 ROHM Co., Ltd. All rights reserved.
2009.12 - Rev.A
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