2SC5916 Datasheet, PDF (2/4 Pages) Rohm – Medium power transistor (30V, 2A)

Transistor
2SC5916
!Electrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Collector−base breakdown voltage BVCEO 30
Collector−emitter breakdown voltage ^{BVCBO 30}
Emitter−base breakdown voltage BVEBO 6
Collector cut-off current
Emitter cut-off current
ICBO
−
IEBO
−
Collector−emitter staturation voltage VCE(sat) −
DC current gain
Transition frequency
hFE
120
fT
−
Collector output capacitance
Turn-on time
Cob
−
Ton
−
Storage time
Tstg
−
Fall time
Tf
−
Typ.
−
−
−
−
−
200
−
250
15
25
100
20
Max.
−
−
−
1.0
1.0
400
390
−
−
−
−
−
Unit
Conditions
V IC=100µA
V _IC=1mA
V IE=100µA
µA VCB=20V
µA VEB=4V
mV IC=1.0A, IB=0.1A
− _{VCD=2V, IC=100mA}
MHz _{VCE=10V, IE=−100mA, f=10MHz}
pF VCB=10V, IE=0, f=1MHz
ns IC=2A
ns ^IB1=200mA
IB2=−200mA
ns _{VCC −25V}
!hFE RANK
Q
120-270
R
180-390
!Electrical characteristic curves
10
10ms
1ms
1
100ms
DC
0.1
1000
Tstg
100
Ton
Tf
Ta=25°C
VCC=25V
IC/IB=10/1
1000
Ta=125°C
VCE=2V
100
Ta=−40°C
Ta=25°C
10
Single non repoetitive pulse
0.01
0.1
1
10
100
COLLECTOR EMITTER VOLTAGE : VCE (V)
Fig.1 Safe operating area
1000
Ta=25°C
VCE=5V
100
VCE=2V
VCE=3V
10
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.2 Switching Time
10
IC/IB=10/1
1
Ta=125°C
1
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.3 DC current gain vs. collector
current
10
Ta=25°C
1
10
0.1
Ta=25°C
0.1
IC/IB=20/1
1
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain vs. collector
current
Ta=−40°C
IC/IB=10/1
0.01
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
0.01
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.5 Collector-emitter saturation voltage Fig.6 Collector-emitter saturation voltage
vs. collector current
vs. collector current
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